Efficiency of Double-Barrier Magnetic Tunnel Junction-Based Digital eNVM Array for Neuro-Inspired Computing

Fast Switching in Magnetic Tunnel Junctions with Double Barrier Layer

Controlling shot noise in double-barrier magnetic tunnel junctions.

We demonstrate that shot noise in Fe/MgO/Fe/MgO/Fe double-barrier magnetic tunnel junctions is determined by the relative magnetic configuration of the junction and also by the asymmetry of the barriers. The proposed theoretical model, based on sequential tunneling through the system and including spin relaxation, successfully accounts for the experimental observations for bias voltages below 0...

Shot noise in magnetic double-barrier tunnel junctions

T. Szczepański, V. K. Dugaev, 2 J. Barnaś∗,3 J. P. Cascales, and F. G. Aliev Department of Physics, Rzeszów University of Technology, al. Powstańców Warszawy 6, 35-959 Rzeszów, Poland Department of Physics and CFIF, Instituto Superior Técnico, TU Lisbon, Av. Rovisco Pais, 1049-001 Lisbon, Portugal Institute of Molecular Physics, Polish Academy of Sciences, Smoluchowskiego 17, 60-179 Poznań, Pol...

Double oxidation scheme for tunnel junction fabrication

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Security Protection for Magnetic Tunnel Junction

Energy efficiency is one of the most important parameters for designing and building a computing system nowadays. Introduction of new transistor and memory technologies to the integrated circuits design have brought hope for low energy very large scale integration (VLSI) circuit design. This excellency is pleasant if the computing system is secure and the energy is not wasted through execution ...